MG75H1ZS1Toshiba - IGBT Power Transistor Module

MG75H1ZS1 Description

The Toshiba MG75H1ZS1 is an IGBT module rated at 1000 V and 75 A. Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG75H1ZS1.

Target Applications

Toshiba MG75H1ZS1 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	1000 V
Rated current	75 A

Download MG75H1ZS1 Datasheet

Datasheet not available