MG50H2YS1 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 50A/800V

MG50H2YS1 GTR module from Toshiba

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MG50H2YS1 Description

Toshiba makes the MG50H2YS1, an 800 V, 50 A IGBT module. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment. Production of many older modules has ended, but we keep sourcing them for repair and maintenance customers.

Need the MG50H2YS1? USComponent stocks and sources power modules for repair shops, OEMs and maintenance teams worldwide. Request a quote and we'll confirm availability and lead time. Always compare against the datasheet before ordering.

Summary of Features

MG50H2YS1 is a 50 A IGBT / power transistor module.

Target Applications

Toshiba MG50H2YS1 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG50H2YS1 is a 50 A IGBT / power transistor module. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
Collector current (IC)50 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG50H2YS1 (reply within 24 hours)