SKM150GB123DSemikron - IGBT Module

SKM150GB123D Description

SKM150GB123D is a high power Insulated Gate Bipolar Transistor (IGBT) module designed for use in a variety of industrial and power electronic applications. The module features a collector-emitter voltage rating of 1200V and a collector current rating of 150A, making it suitable for use in high voltage and high current applications. The SKM150GB123D module is housed in a SEMITOP 3 package, which is designed to provide excellent thermal performance and electrical isolation. The package has a low profile design and a compact footprint, making it easy to integrate into existing electronic systems. The IGBT module is designed for high switching frequency operation, with a maximum switching frequency of up to 20kHz. This allows it to be used in a range of applications, including motor control, renewable energy systems, and power supplies. Overall, the SKM150GB123D IGBT module is a reliable and high-performance component that is well-suited for a range of industrial and power electronic applications that require high power and high voltage capabilities.

Summary of Features

SKM150GB123D is a 1200V 150A IGBT Module.

Target Applications

Semikron SKM150GB123D is used for AC inverter drives and UPS.

Key Specifications

Manufacturer	Semikron
Configuration	Half-bridge IGBT module
Package	SEMITRANS 3
VCES	1200 V
IC	150 A (Tcase = 25 °C) / 110 A (Tcase = 80 °C)
ICRM	200 A
VCE(sat) typ.	2.5 V @ 100 A
Terminal current It(RMS)	500 A
Isolation voltage	2500 V (AC, 1 min)
Junction temperature	-40 to +150 °C

SKM150GB123D Video

Download SKM150GB123D Datasheet

SKM150GB123D PDF Datasheet