SK100MH120RM04ETE1 Semikron - SiC MOSFET Module

Category: MOSFET Modules

Specifications: 1200V, 89A

SK100MH120RM04ETE1 Semikron SiC MOSFET Module

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SK100MH120RM04ETE1 Description

SK100MH120RM04ETE1 is a 1200 V / 89 A H-bridge SiC MOSFET module from Semikron Danfoss (SEMITOP E1 package). Typical applications: electric vehicle charging, Energy storage systems, Solar.

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Summary of Features

  • Optimized design for superior thermal performance
  • Low inductance design
  • Press-Fit contact technology
  • 1200V Trench Gen4 SiC MOSFET
  • Unipolar gate control
  • Optimized switching stability thanks to module integrated gate resistors
  • Integrated NTC temperature sensor
  • UL recognized file no. E 63 532

Target Applications

Semikron SK100MH120RM04ETE1 is used for Electric vehicle charging, Energy storage systems, Solar.

Key Specifications

SK100MH120RM04ETE1 is a 1200 V / 89 A H-bridge SiC MOSFET module from Semikron Danfoss (SEMITOP E1 package). Source: Semikron Danfoss datasheet and product data.

ParameterValue
ManufacturerSemikron Danfoss
Product typeSiC MOSFET module
ConfigurationH-bridge
Drain-source voltage (VDS)1200 V
Drain current (ID)89 A
Chip technologyGen 4 SiC MOSFET (RM)
PackageSEMITOP E1
Supply status (Semikron)Active (new)
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for SK100MH120RM04ETE1 (reply within 24 hours)

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