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SEMiX603GB12E4SiCp Semikron - IGBT Module
SEMiX603GB12E4SiCp Description
SEMiX603GB12E4SiCp is a 1200 V / 600 A half-bridge hybrid SiC IGBT module (IGBT + SiC diode) from Semikron Danfoss (SEMiX 3p package). Typical applications: AC inverter drives, Renewable energy systems.
USComponent supplies SEMiX603GB12E4SiCp and other Semikron power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- With Silicon Carbide (SiC) Schottky diodes
- Homogeneous Si
- VCE(sat) with positive temperature coefficient
- Press-fit pins as auxiliary contacts
- Thermally optimized ceramic
- UL recognized, file no. E63532
Target Applications
Semikron SEMiX603GB12E4SiCp is used for AC inverter drives, Renewable energy systems.
Key Specifications
SEMiX603GB12E4SiCp is a 1200 V / 600 A half-bridge hybrid SiC IGBT module (IGBT + SiC diode) from Semikron Danfoss (SEMiX 3p package). Source: Semikron Danfoss datasheet and product data.
| Parameter | Value |
|---|---|
| Manufacturer | Semikron Danfoss |
| Product type | Hybrid SiC IGBT module (IGBT + SiC diode) |
| Configuration | Half-bridge |
| Collector-emitter voltage (VCES) | 1200 V |
| Nominal collector current (IC nom) | 600 A |
| Chip technology | SiC Diode + IGBT 4 (Trench) |
| Package | SEMiX 3p |
| Supply status (Semikron) | Active |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for SEMiX603GB12E4SiCp (reply within 24 hours)
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