SEMIX151GD066HDS Semikron - IGBT Module

Category: IGBT Modules

Specifications: 600V, 150A

SEMIX151GD066HDS SEMIKRON power module from SEMIKRON

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SEMIX151GD066HDS Description

SEMIX151GD066HDS is a 600 V / 150 A SEMiX 13s six-pack trench IGBT module from Semikron. Typical applications: matrix converters, resonant inverters and current source inverters.

USComponent supplies SEMIX151GD066HDS and other power semiconductors and power supplies, including discontinued types. Request a quote for price and lead time - we reply within 24 hours.

Also available as SEMiX151GD066HDs-M04 (pre-applied TIM: HALA P8).

Summary of Features

  • Homogeneous Si
  • Trench gate technology
  • VCE(sat) with positive temperature coefficient
  • Integrated temperature sensor

Target Applications

Semikron SEMIX151GD066HDS is used for Matrix converters, resonant inverters and current source inverters.

Key Specifications

SEMIX151GD066HDS is a 600 V / 150 A SEMiX 13s six-pack trench IGBT module from Semikron. Source: manufacturer datasheet.

ParameterValue
ManufacturerSemikron
ConfigurationGD six-pack (3-phase bridge), trench IGBT
PackageSEMiX 13s
Collector-emitter voltage (VCES)600 V
Collector current (IC)200 A at Tc = 25 °C, 150 A at 80 °C (Tj = 175 °C)
Pulse collector current (ICRM)300 A
VCE(sat)1.45 V typ. / 1.9 V max. at 150 A, 25 °C (chip)
Switching energy (Tj = 150 °C)Eon 4 mJ, Eoff 6 mJ typ.
Diode forward voltage (VF)1.4 V typ. / 1.6 V max. at 150 A
Thermal resistance Rth(j-c)0.3 K/W per IGBT, 0.5 K/W per diode
Isolation voltage (Visol)4000 V AC, 1 min
Temperature sensorR25 = 5 kΩ
Weight290 g
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for SEMIX151GD066HDS (reply within 24 hours)

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