BYM300A160DN13C_E3222Infineon - Power Transistor Module

BYM300A160DN13C_E3222 Description

BYM300A160DN13C_E3222 is a product code for a dual IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies AG, a German semiconductor manufacturer. The module is designed for use in high-power applications such as motor drives, welding machines, and renewable energy systems. It contains two IGBT power switches and two anti-parallel diodes in a half-bridge configuration, all of which are insulated from the heat sink. The BYM300A160DN13C_E3222 module has a maximum collector-emitter voltage of 1600V, a maximum collector current of 300A, and a maximum power dissipation of 2600W. It operates at a frequency range of up to 20kHz and has a low inductance design for high switching speed. The module has a compact and robust design with a weight of 320g and dimensions of 90mm x 58mm x 30mm. It also has a built-in temperature sensor for monitoring and protection against overheating.

Target Applications

Infineon BYM300A160DN13C_E3222 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

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