BYM600A170DN2 Infineon - Diode Module

Discontinued: Infineon recommended replacement: DZ800S17K3. We supply both the original BYM600A170DN2 and the replacement - check the datasheets before switching.

Category: Diode & Rectifier Modules

Specifications: 1700V, 600A

BYM600A170DN2, INFINEON, Diode Power Module

Discontinued by the manufacturer - we source original new and surplus stock. Availability and lead time are confirmed in our quote.

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BYM600A170DN2 Description

The BYM600A170DN2 from Infineon Technologies is a diode module with a 1700 V / 600 A rating. Diode modules like this are common in rectifier front ends, DC power supplies, welders and plating equipment. Production of many older modules has ended, but we keep sourcing them for repair and maintenance customers.

We help engineers and repair technicians find parts like the BYM600A170DN2, including obsolete ones. Send a quick RFQ for current pricing and delivery. Before ordering, please confirm ratings and pin-out with the official datasheet.

Summary of Features

BYM600A170DN2 is a 1700 V / 400 A diode module from Infineon Technologies (eupec).

  • Inside fast free-wheeling diode
  • Package with insulated metal base plate
  • Diode especially for brake choppers
  • Matched with BSM 300 GA 170 DN 2 E 3166

Target Applications

Infineon BYM600A170DN2 is used for AC/DC power conversion and control: controlled and uncontrolled rectifiers, DC motor drives, soft starters, battery chargers, welding equipment, heater and temperature control, and AC power controllers.

Key Specifications

BYM600A170DN2 is a 1700 V / 400 A diode module from Infineon Technologies (eupec). Source: manufacturer datasheet (detailed).

ParameterValue
ManufacturerInfineon Technologies (eupec)
Product typeDiode Module
ConfigurationSingle diode
PackageSINGLE DIODE 1
Diode reverse voltage (VR25)1700 V (Tj = 25 °C)
DC forward current (IFDC)400 A (Tc = 80 °C); 600 A (Tc = 25 °C)
Pulsed diode current (IFpuls)800 A (Tc = 80 °C, tp = 1 ms)
I²t-value (∫i²t)96800 A²s (tp = 10 ms, Tj = 150 °C)
Diode forward voltage (VF)2 V typ / 2.5 V max (IF = 300 A, Tj = 25 °C)
Power dissipation per diode (PD)1400 W
Insulation test voltage (Vis)4000 Vac (t = 1 min)
Chip temperature (Tj)+150 °C
Thermal resistance (RthJC)≤ 0.09 K/W
DatasheetAvailable on this page (PDF)

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