MUBW50-12E8IXYS - Power Transistor Module

MUBW50-12E8 Description

MUBW50-12E8 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric. IGBTs are semiconductor devices used for switching and amplifying electrical power in a wide range of applications, including motor drives, power converters, and renewable energy systems. IGBTs combine the advantages of MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) and bipolar transistors, allowing for high voltage and current handling capabilities with low power dissipation. The MUBW50-12E8 IGBT module features a blocking voltage of 1200V, a current rating of 50A, and a collector-emitter saturation voltage of 1.9V. It has a single-chip design with a low inductance module construction, making it suitable for high-power applications requiring fast switching and low losses. The module has a compact and robust package design, with a base plate made of aluminum oxide ceramic for high thermal conductivity and electrical isolation. It also features a solderable pin technology for easy and reliable mounting onto a heatsink. Overall, the MUBW50-12E8 IGBT module is a high-performance and reliable device suitable for demanding applications that require high power density and efficient operation. Its high current rating and low saturation voltage make it suitable for applications that require high switching frequency and high efficiency, such as inverter systems for renewable energy sources or motor drives in electric vehicles.

Target Applications

IXYS MUBW50-12E8 finds applications in various industries and systems where high power switching is required.

Download MUBW50-12E8 Datasheet

MUBW50-12E8 PDF Datasheet