MUBW50-12E8 IXYS - Power Transistor Module

Also written as: MUBW5012E8

Category: IGBT Modules

Specifications: 1200V, 90A

MUBW5012E8, IXYS, Converter - Brake - Inverter Module

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MUBW50-12E8 Description

The MUBW50-12E8 is an IGBT module made by IXYS. Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MUBW50-12E8 and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Summary of Features

MUBW50-12E8 is a 1200 V / 90 A PIM from IXYS.

  • High level of integration: one module for the whole drive
  • Low VCE(sat) IGBTs with short-circuit ruggedness (tSC 10 µs)
  • Hiperfast soft-recovery epitaxial free-wheeling diodes
  • Insulated copper base plate, solder pins, NTC temperature sense
  • Applications: AC motor drives with electric braking

Target Applications

IXYS MUBW50-12E8 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MUBW50-12E8 is a 1200 V / 90 A PIM from IXYS. Source: manufacturer datasheet (detailed).

ParameterValue
ManufacturerIXYS
Product typePIM (converter-brake-inverter module, CBI3)
Configuration3-phase rectifier + brake chopper + 3-phase inverter, with NTC
Inverter collector-emitter voltage (VCES)1200 V
Inverter collector current (IC25 / IC80)90 A (TC = 25 °C); 62 A (TC = 80 °C)
Inverter peak collector current (ICM)100 A (VGE = ±15 V, RG = 22 Ω, TVJ = 125 °C)
Inverter VCE(sat)typ. 1.9 V / max. 2.4 V (IC = 50 A, VGE = 15 V, TVJ = 25 °C)
Inverter power dissipation (Ptot)350 W (TC = 25 °C)
Brake chopper IGBT (VCES / IC25)1200 V / 52 A (TC = 25 °C)
Input rectifier (VRRM / IDAVM / IFSM)1600 V / 140 A (TC = 80 °C, bridge) / 700 A (TVJ = 25 °C, 10 ms)
Isolation voltage (VISOL)2500 V~ (50/60 Hz, IISOL ≤ 1 mA)
Junction temperature (TVJ)-40 to +150 °C
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MUBW50-12E8 (reply within 24 hours)

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