FF600R12IP4P Infineon - IGBT Module

Discontinued: Infineon recommended replacement: FF600R12IP4. We supply both the original FF600R12IP4P and the replacement - check the datasheets before switching.

Category: IGBT Modules

Specifications: 1200V, 600A

FF600R12IP4P Infineon IGBT Module

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FF600R12IP4P Description

FF600R12IP4P is a 1,200 V / 600 A PrimePACK™ 2 half-bridge IGBT module from Infineon Technologies with Trench/Fieldstop IGBT4, Emitter Controlled diode and pre-applied thermal interface material (TIM). Typical applications: 3-level applications, Motor drives, Wind turbines. Infineon has discontinued FF600R12IP4P (discontinuation notice Sep 19, 2024, last order date Mar 31, 2025). Infineon's nearest equivalent: FF600R12IP4.

USComponent supplies discontinued Infineon / eupec modules. Request a quote for FF600R12IP4P availability and price - we reply within 24 hours.

Summary of Features

FF600R12IP4P is a 1,200 V / 600 A PrimePACK™ 2 half-bridge IGBT module from Infineon Technologies with Trench/Fieldstop IGBT4, Emitter Controlled diode and pre-applied thermal interface material (TIM).

  • VCES = 1200 V, IC nom = 600 A / ICRM = 1200 A
  • High short-circuit capability
  • High surge current capability
  • High current density
  • Tvj op = 150 °C
  • VCEsat with positive temperature coefficient
  • 4 kV AC 1 min insulation
  • Package with CTI > 400
  • High creepage and clearance distances
  • Integrated NTC temperature sensor
  • Pre-applied Thermal Interface Material
  • RoHS compliant

Target Applications

Infineon FF600R12IP4P is used for 3-level applications, Motor drives and Wind turbines.

Key Specifications

FF600R12IP4P is a 1,200 V / 600 A PrimePACK™ 2 half-bridge IGBT module from Infineon Technologies with Trench/Fieldstop IGBT4, Emitter Controlled diode and pre-applied thermal interface material (TIM). Source: Infineon datasheet (V3.0, 2020-08-21).

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
HousingPrimePACK™ 2
ConfigurationHalf-bridge (dual), integrated NTC
TechnologyTrench/Fieldstop IGBT4, Emitter Controlled diode, pre-applied thermal interface material
Collector-emitter voltage (VCES)1,200 V
Continuous DC collector current (ICDC)600 A (TH = 100 °C, Tvj max = 175 °C)
Repetitive peak collector current (ICRM)1,200 A
Gate-emitter peak voltage (VGES)±20 V
VCE(sat), IC = 600 A, VGE = 15 V1.70 V typ. / 2.05 V max. (25 °C); 2.10 V typ. / 2.55 V max. (150 °C)
Gate threshold voltage VGEth5.00 / 5.80 / 6.50 V (min. / typ. / max.)
Gate charge (QG)4.40 µC
Input capacitance (Cies)37.0 nF
Turn-on / turn-off energy (Tvj = 150 °C)Eon 83.0 mJ / Eoff 115 mJ (600 A, 600 V)
Short-circuit current (ISC)2,400 A (tP ≤ 10 µs, Tvj = 150 °C)
Thermal resistance junction-heatsink (RthJH)65.9 K/kW per IGBT, 104 K/kW per diode (with pre-applied TIM)
Diode forward voltage VF, IF = 600 A1.80 V typ. / 2.20 V max. (25 °C)
Diode repetitive peak forward current (IFRM)1,200 A
Temperature under switching conditions (Tvj op)-40 to +150 °C
NTC rated resistance (R25)5.00 kΩ
Isolation test voltage (VISOL)4.0 kV (RMS, 50 Hz, 1 min)
Stray inductance (LsCE)18 nH
Baseplate / internal isolationCu / Al2O3
Creepage / clearance distance33.0 mm / 19.0 mm
Mounting torque (M5)3.00 - 6.00 N·m
Terminal torqueM4: 1.8 - 2.1 N·m, M8: 8.0 - 10 N·m
Weight825 g
Status (Infineon)Discontinued, last order date Mar 31, 2025
Nearest equivalent (Infineon)FF600R12IP4
Applications (datasheet)3-level applications, Motor drives, Wind turbines
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for FF600R12IP4P (reply within 24 hours)

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