FF300R12KT3P_E Infineon - IGBT Module
FF300R12KT3P_E Description
FF300R12KT3P_E is a 1200 V, 300 A Infineon igbt module (dual (half bridge)), used for high-power converters, motor drives, UPS, wind turbines.
USComponent supplies FF300R12KT3P_E and other Infineon / Eupec power semiconductors. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- 1,200 V / 300 A dual (half bridge)
- Trench/Fieldstop IGBT3, Emitter Controlled HE diode
- 62 mm C-series
- Low switching losses
- VCEsat with positive temperature coefficient
- Isolated base plate
- Pre-applied thermal interface material
Target Applications
Infineon FF300R12KT3P_E is used for High-power converters, motor drives, UPS, wind turbines.
Key Specifications
FF300R12KT3P_E is a 1,200 V, 300 A Infineon igbt module. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | IGBT module |
| Configuration | Dual (half bridge) |
| Collector-emitter voltage (VCES) | 1,200 V |
| Collector current (IC nom) | 300 A |
| Technology | Trench/Fieldstop IGBT3, Emitter Controlled HE diode |
| Package | 62 mm C-series |
Technical document (PDF) | Request a quote for FF300R12KT3P_E (reply within 24 hours)

