DF1000R17IE4D_B2 Infineon - IGBT Module
Discontinued: Infineon recommended replacement: FF1000R17IE4D_B2. We supply both the original DF1000R17IE4D_B2 and the replacement - check the datasheets before switching.
DF1000R17IE4D_B2 Description
Rated at 1700 V and 1000 A, the Infineon Technologies DF1000R17IE4D_B2 is an IGBT. It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies.
We help engineers and repair technicians find parts like the DF1000R17IE4D_B2, including obsolete ones. Send a quick RFQ for current pricing and delivery. Before ordering, please confirm ratings and pin-out with the official datasheet.
Summary of Features
- Extended Operation Temperature Tvj op
- High DC Stability
- High Current Density
- Low Switching Losses
- Low VCEsat
- Enlarged Diode for regenerative operation
- Package with CTI > 400
- High Creepage and Clearance Distances
- High Power and Thermal Cycling Capability
- High Power Density
Target Applications
Infineon DF1000R17IE4D_B2 is used for 3-Level-Applications, Chopper Applications, Auxiliary Inverters, High Power Converters, Motor Drives, Traction Drives and Wind Turbines.
Key Specifications
DF1000R17IE4D_B2 is a 1,700 V, 1000 A diode. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | Diode |
| Repetitive peak reverse voltage (VRRM) | 1,700 V |
| Rated forward / output current | 1000 A |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for DF1000R17IE4D_B2 (reply within 24 hours)
Related Part Numbers
| DF1000R17IE4 1700V, 1000A | DF1000R17IE4P 1700V, 1000A | DF1000R12IP4D 1200V, 1000A | DF650R17IE4 1700V, 650A |
| DF900R12IP4D 1200V, 900A | DF900R12IP4DV 1200V, 900A | DF100AA120 1200V, 100A | DF100AA160 1600V, 100A |
| DF100BA40 400V, 100A | DF100BA80 800V, 100A | DF100LA120 1200V, 100A | DF100LA160 1600V, 100A |
| DF100LA80 800V, 100A | DF100LB160 1600V, 100A | DF100LB80 800V, 100A | DF100R07W1H5FP_B53 650V, 50A |

