DF1000R17IE4D_B2 Infineon - IGBT

Category: IGBT Modules

Specifications: 1700V, 1000A

DF1000R17IE4D_B2 IGBT from Eupec Infineon

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DF1000R17IE4D_B2 Description

Rated at 1700 V and 1000 A, the Infineon Technologies DF1000R17IE4D_B2 is an IGBT. It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies.

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Summary of Features

  • Extended Operation Temperature Tvj op
  • High DC Stability
  • High Current Density
  • Low Switching Losses
  • Low VCEsat
  • Enlarged Diode for regenerative operation
  • Package with CTI > 400
  • High Creepage and Clearance Distances
  • High Power and Thermal Cycling Capability
  • High Power Density

Target Applications

Infineon DF1000R17IE4D_B2 is used for 3-Level-Applications, Chopper Applications, Auxiliary Inverters, High Power Converters, Motor Drives, Traction Drives and Wind Turbines.

Key Specifications

DF1000R17IE4D_B2 is a 1,700 V, 1000 A diode. Source: manufacturer datasheet.

ParameterValue
Product typeDiode
Repetitive peak reverse voltage (VRRM)1,700 V
Rated forward / output current1000 A
DatasheetAvailable on this page (PDF)

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