DDB6U215N08L Infineon - Power Transistor Module

Category: Bridge Rectifiers

Specifications: 800(V) / 215(A)

DDB6U215N08L Infineon Power Transistor Module

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DDB6U215N08L Description

Infineon Technologies DDB6U215N08L is a rectifier bridge rated at 800 V and 215 A. A bridge like this is usually found at the front end of inverters, drives and switch-mode power supplies.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the DDB6U215N08L, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Summary of Features

Power Transistor Module

Target Applications

Infineon DDB6U215N08L is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerInfineon Technologies
CategoryPower Transistor Module
Rated voltage800 V
Rated current215 A

Related Part Numbers

DDB6U205N08L
800(V) / 205(A)
DDB6U215N06L
600(V) / 215(A)
DDB6U145N08L
800(V) / 145(A)
DDB6U215N12L
1200(V) / 215(A)
DDB6U215N14L
1400(V) / 215(A)
DDB6U215N16L
1600V, 215A
DDB6U215N04L
400(V) / 215(A)
DDB6U215N18L
1800(V) / 215(A)
DDB6U215N12
1200V, 85A
DDB6U215N14
1400V, 215A
DDB6U215N02L
200(V) / 215(A)
DDB6U205N18L
1800(V) / 205(A)
DDB6U215N16
1600V, 215A
DDB6U205N18
1800V, 208A
DDB6U205N16L
205A/1600V
DDB6U215N18
1800V, 215A