DDB6U205N12LInfineon - Power Transistor Module

Specifications: 1200(V) / 205(A)

DDB6U205N12L Infineon Power Transistor Module

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DDB6U205N12L Description

The Infineon Technologies DDB6U205N12L is a power semiconductor module rated at 1200 V and 205 A. Typical applications for this type of component include motor drives, power conversion and industrial control equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the DDB6U205N12L.

Summary of Features

Rectifier Diode

Target Applications

Infineon DDB6U205N12L is used for Various rectifiers, Battery Chargers and DC Motor Drives.

Key Specifications

ManufacturerInfineon Technologies
CategoryPower Transistor Modules
Rated voltage1200 V
Rated current205 A

Download DDB6U205N12L Datasheet

Datasheet not available