BSM30GP60Infineon - IGBT Module

BSM30GP60 Description

BSM30GP60 is a type of Insulated Gate Bipolar Transistor (IGBT) module produced by Mitsubishi Electric, a leading manufacturer of power electronics components. It is designed for use in high-power switching applications, such as motor drives, renewable energy systems, and industrial automation. The IGBT module has a current rating of 30A and a voltage rating of 600V. It consists of two IGBTs and two anti-parallel diodes in a half-bridge configuration, which allows it to switch high power loads efficiently. The BSM30GP60 IGBT module is designed with low-on resistance and high-speed switching characteristics, which result in low power dissipation and high efficiency. It is also designed with a compact and robust package, which provides excellent thermal performance and high resistance to mechanical stress. The module is also equipped with an electrical interlock system that prevents incorrect module insertion, ensuring safe and reliable operation. Overall, the BSM30GP60 IGBT module is a high-performance device that provides efficient and reliable power switching capabilities in high-power applications. Its high current and voltage ratings, combined with its low-on resistance and high-speed switching characteristics, make it suitable for use in demanding power electronics applications that require high efficiency and precise control.

Target Applications

Infineon BSM30GP60 is used for AC Motor Control, Motion/Servo Control, UPS and Welding Power Supplies.

Key Specifications

Manufacturer	Infineon Technologies
Category	IGBT Modules
Rated voltage	600 V
Rated current	50 A

Download BSM30GP60 Datasheet

BSM30GP60 PDF Datasheet