BSM25GD120DN2 Infineon - IGBT Module

BSM25GD120DN2 Description

Rated at 1200 V, the Infineon Technologies BSM25GD120DN2 is an IGBT module. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

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Summary of Features

Target Applications

Infineon BSM25GD120DN2 is used for Drives, Wind, Traction, CAV and UPS.

Key Specifications

BSM25GD120DN2 is a 1200 V / 25 A IGBT module from Infineon Technologies (eupec). Source: manufacturer datasheet (detailed).

Parameter	Value
Manufacturer	Infineon Technologies (eupec)
Product type	IGBT module
Configuration	Six-pack (3-phase full-bridge)
Package	ECONOPACK 2
Collector-emitter voltage (VCE)	1200 V
DC collector current (IC)	25 A (Tc = 80 °C); 35 A (Tc = 25 °C)
Pulsed collector current (ICpuls)	50 A (Tc = 80 °C, tp = 1 ms)
Collector-emitter saturation voltage (VCE(sat))	2.5 V typ / 3 V max (VGE = 15 V, IC = 25 A, Tj = 25 °C)
Power dissipation per IGBT (Ptot)	200 W (Tc = 25 °C)
Insulation test voltage (Vis)	2500 Vac (t = 1 min)
Chip temperature (Tj)	+150 °C
Thermal resistance (RthJC)	≤ 0.6 K/W IGBT, ≤ 1 K/W diode
Datasheet	Available on this page (PDF)

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