MG100H2CL1Toshiba - IGBT Power Transistor Module

Specifications: 550V, 100A

MG100H2CL1, Toshiba, Power Module

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MG100H2CL1 Description

The Toshiba MG100H2CL1 is an IGBT module rated at 550 V and 100 A, available from USComponent. Transistor module Darlington Half Bridge Power Module - Viso:2.5kV(RMS). Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG100H2CL1.

Target Applications

Toshiba MG100H2CL1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage550 V
Rated current100 A

Download MG100H2CL1 Datasheet

MG100H2CL1 PDF Datasheet