K20A60U Toshiba - Power Transistor Module

Specifications: 600V, 20A

K20A60U, TOSHIBA, Field Effect Transistor Silicon N Channel MOS Type(DTMOS II)

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K20A60U Description

K20A60U is a N-channel MOSFET (DTMOS II), TK20A60U from Toshiba, rated 600V, 20A. Typical applications: Switching regulator applications.

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Summary of Features

  • Low drain-source ON-resistance: RDS(ON) = 0.165 Ω (typ.)
  • High forward transfer admittance: |Yfs| = 12 S (typ.)
  • Low leakage current: IDSS = 100 µA (VDS = 600 V)
  • Enhancement-mode: Vth = 3.0 to 5.0 V

Target Applications

Toshiba K20A60U is used for Switching regulator applications.

Key Specifications

K20A60U is a N-channel MOSFET (DTMOS II), TK20A60U from Toshiba, rated 600V, 20A. Source: manufacturer datasheet.

ParameterValue
ManufacturerToshiba
Drain-source voltage VDSS600 V
Drain current ID (DC)20 A
Pulse drain current IDP (1 ms)40 A
On-resistance RDS(ON)0.165 Ω (typ.)
Drain power dissipation (Tc = 25 °C)45 W
Channel temperature150 °C
PackageTOSHIBA 2-10U1B (SC-67), 1.7 g
DatasheetAvailable on this page (PDF)

Note: K20A60U is the device marking of Toshiba TK20A60U.

Technical document (PDF)  |  Request a quote for K20A60U (reply within 24 hours)

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