30J1G11Toshiba - Power Transistor Module

Specifications: 600(V) / 30(A)

30J1G11 Toshiba Power Transistor Module

We beat competitor's price with faster delivery.

For 6 pieces or more, submit your inquiry here, email to sales@uscomponent.com or call 1-281-968-0718

30J1G11 Description

The Toshiba 30J1G11 is a power semiconductor module rated at 600 V and 30 A, available from USComponent. Typical applications for this type of component include motor drives, power conversion and industrial control equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the 30J1G11.

Summary of Features

Schottky Rectifier

Target Applications

Toshiba 30J1G11 is used for switching power supplies, converters, freewheeling diodes and reverse battery protection.

Key Specifications

ManufacturerToshiba
CategoryPower Transistor Modules
Rated voltage600 V
Rated current30 A

Download 30J1G11 Datasheet

Datasheet not available