30J1G11 Toshiba - Power Transistor Module

Specifications: 600(V) / 30(A)

30J1G11 Toshiba Power Transistor Module

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30J1G11 Description

Toshiba 30J1G11 is a power semiconductor module rated at 600 V and 30 A. Parts like this are found in drives, power converters and other industrial control systems.

Looking for a replacement 30J1G11? USComponent can quote new and hard-to-find stock and ships worldwide. Request a quote for pricing and lead time, and double-check the datasheet to make sure it fits your application.

Summary of Features

Schottky Rectifier

Target Applications

Toshiba 30J1G11 is used for switching power supplies, converters, freewheeling diodes and reverse battery protection.

Key Specifications

ManufacturerToshiba
CategoryPower Transistor Modules
Rated voltage600 V
Rated current30 A

Related Part Numbers

110J2G41160J2G41
600(V) / 110(A)		30J6P41
600(V) / 30(A)		30G6P42
400(V) / 30(A)
30KF20EX3
200(V) / 30(A)		30G6P41
400(V) / 30(A)		30L6P41
800(V) / 30(A)		309CNQ150
150V, 300A
30L6P42305D48WFR
Output Power: 3 W Output Voltage: 5 V		30L6P43A
800(V) / 30(A)		303CNQ100
100V, 300A
30L6P44
800(V) / 30(A)		303CNQ080
80V, 300A		30L6P45
800(V) / 30(A)		301CNQ100
100(V) / 300(A)
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