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SKM200GB12T4SiC2 Semikron - IGBT Module
SKM200GB12T4SiC2 Description
SKM200GB12T4SiC2 is a 1200 V / 200 A half-bridge hybrid SiC IGBT module (IGBT + SiC diode) from Semikron Danfoss (SEMITRANS 3 package). Typical applications: AC inverter drives, Electronic welders, DC/DC converters.
USComponent supplies SKM200GB12T4SiC2 and other Semikron power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- With Silicon Carbide Schottky diodes (ROHM)
- Insulated copper baseplate using DBC Technology (Direct Bonded Copper)
- UL recognized, file no. E63532
- Increased power cycling capability
- With integrated gate resistor
- For higher switching frequencies
Target Applications
Semikron SKM200GB12T4SiC2 is used for AC inverter drives, Electronic welders, DC/DC converters.
Key Specifications
SKM200GB12T4SiC2 is a 1200 V / 200 A half-bridge hybrid SiC IGBT module (IGBT + SiC diode) from Semikron Danfoss (SEMITRANS 3 package). Source: Semikron Danfoss datasheet and product data.
| Parameter | Value |
|---|---|
| Manufacturer | Semikron Danfoss |
| Product type | Hybrid SiC IGBT module (IGBT + SiC diode) |
| Configuration | Half-bridge |
| Collector-emitter voltage (VCES) | 1200 V |
| Nominal collector current (IC nom) | 200 A |
| Chip technology | SiC Diode + IGBT 4 (Trench) |
| Package | SEMITRANS 3 |
| Supply status (Semikron) | Active (new) |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for SKM200GB12T4SiC2 (reply within 24 hours)
Related Part Numbers
| SKM200GB12F4SiC2 1200V, 200A | SKM200GAL12T4 1200V, 200A | SKM200GAL12E4 1200V, 200A | SKM200GAR12E4 1200V, 200A |
| SKM200GB12E4 1200V, 200A | SKM200GB12F4 1200V, 200A | SKM200GB12V 1200V, 200A | SKM200GB12T4 1200V, 200A |
| SKM200GB176D 1700V, 150A | SKM200GB12M7G 1200V, 200A | SKM200GB17E4 1700V, 200A | SKM200GB12M7 1200V, 200A |
| SKM200GBD123D 1200V, 200A | SKM200GB12F4SiC3 1200V, 200A | SKM200GBD126D 1200V, 150A | SKM200GM12T4 1200V, 200A |
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