SKM200GAL12F4SiC3 Semikron - IGBT Module

Category: IGBT Modules

Specifications: 1200V, 200A

SKM200GAL12F4SiC3 Semikron IGBT Module

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SKM200GAL12F4SiC3 Description

SKM200GAL12F4SiC3 is a 1200 V / 200 A chopper hybrid SiC IGBT module (IGBT + SiC diode) from Semikron Danfoss (SEMITRANS 3 package). Typical applications: AC inverter drives, Electronic welders, DC/DC converters.

USComponent supplies SKM200GAL12F4SiC3 and other Semikron power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • With Silicon Carbide Schottky diodes (ROHM)
  • Insulated copper baseplate using DBC Technology (Direct Bonded Copper)
  • UL recognized, file no. E63532
  • With integrated gate resistor
  • For higher switching frequencies

Target Applications

Semikron SKM200GAL12F4SiC3 is used for AC inverter drives, Electronic welders, DC/DC converters.

Key Specifications

SKM200GAL12F4SiC3 is a 1200 V / 200 A chopper hybrid SiC IGBT module (IGBT + SiC diode) from Semikron Danfoss (SEMITRANS 3 package). Source: Semikron Danfoss datasheet and product data.

ParameterValue
ManufacturerSemikron Danfoss
Product typeHybrid SiC IGBT module (IGBT + SiC diode)
ConfigurationChopper
Collector-emitter voltage (VCES)1200 V
Nominal collector current (IC nom)200 A
Chip technologySiC Diode + IGBT 4 fast (Trench)
PackageSEMITRANS 3
Supply status (Semikron)Active (new)
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for SKM200GAL12F4SiC3 (reply within 24 hours)

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