SKM100GB125DNSemikron - IGBT Module

SKM100GB125DN Description

SKM100GB125DN is a high power insulated-gate bipolar transistor (IGBT) module, which is a type of semiconductor device used for switching and amplifying electrical power in high power applications. The module consists of two IGBTs connected in a half-bridge configuration, with each IGBT having a collector-emitter voltage rating of 1250 volts and a maximum collector current rating of 100 amps. The module also includes a gate driver circuitry for controlling the IGBTs, as well as built-in protection features such as short-circuit and over-temperature protection. The SKM100GB125DN is designed for use in high power applications, such as motor drives, power supplies, and renewable energy systems. It is optimized for high efficiency, with low switching losses and a low on-state voltage drop. The module also features a high thermal conductivity and low thermal resistance, which allows for efficient heat dissipation and high power handling capabilities.

Summary of Features

SKM100GB125DN is a 1200V 100A IGBT Module.

Target Applications

Semikron SKM100GB125DN is used for switched mode power supplies above 20 kHz, resonant inverters up to 100 kHz, inductive heating, and electronic welders above 20 kHz.

Key Specifications

Manufacturer	Semikron
Configuration	Half-bridge (GB) ultra fast NPT IGBT module
Package	SEMITRANS 2N
VCES	1200 V
IC	100 A (TC = 25 °C) / 80 A (TC = 85 °C)
ICRM	150 A
VCE(sat) typ. / max.	3.3 / 3.85 V @ 75 A (chip, 25 °C)
Inverse diode IF	95 A (TC = 25 °C) / 65 A (TC = 80 °C)
Terminal current It(RMS)	200 A
Isolation voltage	4000 V (AC, 1 min)
Junction temperature	-40 to +150 °C

SKM100GB125DN Video

Download SKM100GB125DN Datasheet

SKM100GB125DN PDF Datasheet