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SKDT115-16Semikron - Power Transistor Module

Specifications: 1600V, 110A

SKDT115-16, Semikron

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SKDT115-16 Description

SKDT115-16 is a high power insulated-gate bipolar transistor (IGBT) module, which is a type of semiconductor device used for switching and amplifying electrical power in high power applications. The module consists of two IGBTs connected in a half-bridge configuration, with each IGBT having a collector-emitter voltage rating of 1250 volts and a maximum collector current rating of 100 amps. The module also includes a gate driver circuitry for controlling the IGBTs, as well as built-in protection features such as short-circuit and over-temperature protection. The SKM100GB125DN is designed for use in high power applications, such as motor drives, power supplies, and renewable energy systems. It is optimized for high efficiency, with low switching losses and a low on-state voltage drop. The module also features a high thermal conductivity and low thermal resistance, which allows for efficient heat dissipation and high power handling capabilities.

Summary of Features

Rectifier Diode

Target Applications

Semikron SKDT115-16 is used for DC drives, Controlled filed rectifiers for DC motors and Controlled battery charger.

Key Specifications

ManufacturerSemikron
CategoryPower Transistor Modules
Rated voltage1600 V
Rated current110 A

Download SKDT115-16 Datasheet

Datasheet not available