STTA812G STMicroelectronics - Power Module

Category: Rectifier & Schottky Diodes

Specifications: 1200V, 8A

STTA812G, SEMIKRON, IGBT Module

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STTA812G Description

STTA812G is an STMicroelectronics TURBOSWITCH ultra-fast high voltage diode rated 1,200 V, 8 A, in a D2PAK package.

USComponent supplies STTA812G and other power semiconductors, including discontinued types. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • Ultra-fast, soft and noise-free recovery
  • Very low overall power losses in both the diode and the companion transistor
  • High frequency and/or high pulsed current operations

Target Applications

STMicroelectronics STTA812G is used for Motor control circuits, snubber, clamping or demagnetizing diode in the primary of SMPS and high voltage rectifier diode in the secondary of SMPS.

Key Specifications

STTA812G is a 1,200 V, 8 A TURBOSWITCH ultra-fast high voltage diode from STMicroelectronics, D2PAK package. Source: manufacturer datasheet (STMicroelectronics).

ParameterValue
ManufacturerSTMicroelectronics
Product typeTURBOSWITCH ultra-fast high voltage diode
Repetitive peak reverse voltage (VRRM)1,200 V
Average forward current IF(AV)8 A
Reverse recovery time (trr)50 ns (typ)
Forward voltage (VF)2.0 V (max)
Surge forward current IFSM (10 ms sinusoidal)70 A
Max. junction temperature (Tj)150 °C
PackageD2PAK
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for STTA812G (reply within 24 hours)