ESM4045DV STMicroelectronics - Bipolar Transistor Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 600V, 42A

ESM4045DV STMicroelectronics Bipolar Transistor Module

Availability and lead time are confirmed in our quote.

  • ✓ Quote within 24 hours
  • ✓ Original manufacturer parts, inspected before shipping
  • ✓ Credit cards and NET terms accepted

Or email sales@uscomponent.com or call 1-281-968-0718.

ESM4045DV Description

ESM4045DV is a 600 V / 42 A NPN Darlington power module (ISOTOP) with ultrafast free-wheeling diode from STMicroelectronics (SGS-Thomson). Typical applications: motor control, SMPS and UPS, DC/DC and DC/AC converters and welding equipment.

USComponent supplies ESM4045DV and other power semiconductors, including discontinued types. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • High current power bipolar module
  • Very low Rth junction-case
  • Specified accidental overload areas
  • Ultrafast free-wheeling diode
  • Isolated case (2500 V RMS)
  • Low internal parasitic inductance

Target Applications

STMicroelectronics ESM4045DV is used for Motor control, SMPS and UPS, DC/DC and DC/AC converters and welding equipment.

Key Specifications

ESM4045DV is a 600 V / 42 A NPN Darlington power module (ISOTOP) with ultrafast free-wheeling diode from STMicroelectronics (SGS-Thomson). Source: manufacturer datasheet.

ParameterValue
ManufacturerSTMicroelectronics (SGS-Thomson)
ConfigurationNPN Darlington transistor with ultrafast free-wheeling diode
PackageISOTOP, isolated case 2500 V RMS
Collector-emitter voltage (VCEV, VBE = -5 V)600 V
Collector-emitter voltage (VCEO(sus))450 V
Collector current (IC)42 A
Collector peak current (ICM)63 A (tp = 10 ms)
Base current (IB)4 A
Total dissipation (Ptot)150 W at Tc = 25 °C
DC current gain (hFE)220 min. at IC = 35 A, VCE = 5 V
VCE(sat)1.4 V typ. at IC = 35 A, IB = 2 A
Diode forward voltage (VF)1.5 V typ. / 1.85 V max. at IF = 35 A, Tj = 100 °C
Switching (Tj = 100 °C)ts 3.2 µs, tf 0.25 µs, tc 0.75 µs typ. at 25 A
Thermal resistance Rth(j-c)0.83 °C/W transistor, 1.5 °C/W diode (max.)
Junction temperature150 °C max.
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for ESM4045DV (reply within 24 hours)

Related Part Numbers

ESM6045AV
1000V, 72A
ESAL01-02CESAL01-01D
100V, 150A
ESAL01-01C
100(V) / 150(A)
ESAH76-06DESAH76-06CESAH73-03C
300(V) / 100(A)
ESAH72-06D
ESAG84-004
40(V) / 200(A)
ESAG76-06DESAG76-06CESAG73-06N
600(V) / 50(A)
ESAG73-06C
300V , 600V / 2x50A
ESAG32-06T
600(V) / 75(A)
ESAG31-06T
600(V) / 50(A)
ESAG01-01D
100V, 200V / 50A