P2H10M440H NIEC - MOSFET Module
P2H10M440H Description
P2H10M440H is a 500 V / 60 A dual power MOSFET module from Kyocera (Nihon Inter Electronics).
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Summary of Features
- Dual MOSFET module with fast recovery diodes
- 2000 V isolation
- Same datasheet covers PD10M440H (different terminal layout)
Target Applications
NIEC P2H10M440H is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.
Key Specifications
P2H10M440H is a 500 V / 60 A dual power MOSFET module from Kyocera (Nihon Inter Electronics). Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Manufacturer | Kyocera (Nihon Inter Electronics) |
| Configuration | Two MOSFETs, each with series Schottky diode and anti-parallel fast recovery diode (P2H type) |
| Drain-source voltage (VDSS) | 500 V |
| Gate-source voltage (VGSS) | ±20 V |
| Continuous drain current (ID) | 60 A DC; 85 A at 50 % duty (Tc = 25 °C) |
| Pulsed drain current (IDM) | 170 A |
| Total power dissipation (PD) | 730 W |
| Isolation voltage (Viso) | 2000 V AC, 1 min |
| Junction temperature | -40 to +150 °C |
| Mounting torque | 3.0 N·m (base), 2.0 N·m (terminals) |
| Weight | 220 g approx. |
| Datasheet | Available on this page (PDF) |
Note: data taken from the Kyocera (Nihon Inter Electronics) datasheet of PD10M441H / PD10M440H / P2H10M441H / P2H10M440H, which covers P2H10M440H.
Technical document (PDF) | Request a quote for P2H10M440H (reply within 24 hours)

