LD411660Mitsubishi - Power Transistor Module

LD411660 Description

LD411660 is a rectifier diode designed for use in high voltage and high current applications. It is manufactured by STMicroelectronics, a company that specializes in semiconductor devices. Here are some key specifications for the LD411660: Maximum repetitive reverse voltage: 1600 volts Maximum average forward rectified current: 165 amperes Maximum peak forward surge current: 2000 amperes Maximum forward voltage drop: 1.5 volts Operating temperature range: -40 to 150 degrees Celsius The LD411660 features a compact and robust design that is suitable for use in a wide range of power supply applications. It has a low forward voltage drop, which minimizes power loss and increases efficiency. The rectifier diode also features a high surge current capability, making it suitable for applications that experience brief high currents such as inrush current. The LD411660 is designed with a glass-passivated junction and a high temperature soldering capability, ensuring high reliability in harsh operating conditions. It is also RoHS compliant, which means it is free of hazardous materials.

Summary of Features

Target Applications

Mitsubishi LD411660 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

LD411660 is a 1,600 V, 60 A diode module (POW-R-BLOK). Source: manufacturer datasheet.

Parameter	Value
Product type	Diode module (POW-R-BLOK)
Repetitive peak reverse voltage (VRRM)	1,600 V
Rated forward / output current	60 A
Datasheet	Available on this page (PDF)

Download LD411660 Datasheet

LD411660 PDF Datasheet