CM200DU-24FMitsubishi - IGBT Power Transistor Module

Specifications: 1200(V) / 200(A)

CM200DU-24F IGBT POWER TRANSISTOR MODULE from Mitsubishi

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CM200DU-24F Description

The Mitsubishi Electric CM200DU-24F is an IGBT module rated at 1200 V and 200 A. Trench Gate Design Dual IGBTMOD 200 Amperes/1200 Volts. This type of device is widely used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

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Summary of Features

Trench Gate Design Dual IGBTMOD

Target Applications

Mitsubishi CM200DU-24F is used for AC Motor Control, UPS and Battery Powered Supplies.

Key Specifications

ManufacturerMitsubishi Electric
ConfigurationDual - two IGBTs in half-bridge configuration with free-wheel diodes
SeriesF-Series
VCES1200 V
IC200 A (TC = 25 °C)
ICM (peak)400 A
VCE(sat) typ.1.8 V @ 200 A
Isolation voltage2500 Vrms (AC, 1 min)
Terminal torqueM6: 3.5 - 4.5 N·m
Mounting torqueM6: 3.5 - 4.5 N·m
Weight400 g
Junction temperature-40 to +150 °C

CM200DU-24F Video

CM200DU-24F video

Download CM200DU-24F Datasheet

CM200DU-24F PDF Datasheet