IRF630A International Rectifier - MOSFET Module

Category: MOSFET Modules

Specifications: 200V, 9A

IRF630A International Rectifier MOSFET from International Rectifier

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IRF630A Description

IRF630A is an Advanced Power MOSFET, N-channel from Fairchild Semiconductor, rated 200V, 9A.

USComponent supplies IRF630A and other power semiconductors and power supplies, including discontinued types. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • Avalanche rugged technology
  • Rugged gate oxide technology
  • Lower input capacitance
  • Improved gate charge
  • Extended safe operating area
  • Lower leakage current: 10 µA (max.) @ VDS = 200 V

Target Applications

International Rectifier IRF630A is used for high-frequency power switching in switch mode power supplies, DC-DC converters, battery-powered vehicles and equipment, welding machines and induction heating.

Key Specifications

IRF630A is an Advanced Power MOSFET, N-channel from Fairchild Semiconductor, rated 200V, 9A. Source: manufacturer datasheet.

ParameterValue
ManufacturerFairchild Semiconductor
Drain-source voltage VDS200 V
Continuous drain current ID (TC = 25 °C)9 A
ID (TC = 100 °C)5.7 A
Pulsed drain current IDM36 A
On-resistance RDS(on)0.4 Ω (0.333 Ω typ.)
Max. power dissipation (TC = 25 °C)72 W
PackageTO-220
DatasheetAvailable on this page (PDF)

Note: The IRF630A datasheet is published by Fairchild (Advanced Power MOSFET series).

Technical document (PDF)  |  Request a quote for IRF630A (reply within 24 hours)

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