IRF1018EPBF International Rectifier - MOSFET Module

Category: MOSFET Modules

Specifications: 60V, 79A

IRF1018EPBF, INTERNATIONAL_RECTIFIER, HEXFET® Power MOSFET

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IRF1018EPBF Description

IRF1018EPBF is a HEXFET power MOSFET, N-channel from International Rectifier, rated 60V, 79A. Typical applications: High efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits.

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Summary of Features

  • Improved gate, avalanche and dynamic dv/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability
  • 175 °C operating temperature

Target Applications

International Rectifier IRF1018EPBF is used for High efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits.

Key Specifications

IRF1018EPBF is a HEXFET power MOSFET, N-channel from International Rectifier, rated 60V, 79A. Source: manufacturer datasheet.

ParameterValue
ManufacturerInternational Rectifier
Drain-source voltage VDS60 V
Continuous drain current ID (TC = 25 °C)79 A
ID (TC = 100 °C)56 A
Pulsed drain current IDM315 A
On-resistance RDS(on)7.1 mΩ typ. / 8.4 mΩ max.
Max. power dissipation (TC = 25 °C)110 W
PackageTO-220AB
DatasheetAvailable on this page (PDF)

Note: data taken from the International Rectifier datasheet of IRF1018EPbF / ESPbF / ESLPbF, which covers IRF1018EPBF.

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