IRF1018EPBF International Rectifier - MOSFET Module
IRF1018EPBF Description
IRF1018EPBF is a HEXFET power MOSFET, N-channel from International Rectifier, rated 60V, 79A. Typical applications: High efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits.
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Summary of Features
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- 175 °C operating temperature
Target Applications
International Rectifier IRF1018EPBF is used for High efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits.
Key Specifications
IRF1018EPBF is a HEXFET power MOSFET, N-channel from International Rectifier, rated 60V, 79A. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Manufacturer | International Rectifier |
| Drain-source voltage VDS | 60 V |
| Continuous drain current ID (TC = 25 °C) | 79 A |
| ID (TC = 100 °C) | 56 A |
| Pulsed drain current IDM | 315 A |
| On-resistance RDS(on) | 7.1 mΩ typ. / 8.4 mΩ max. |
| Max. power dissipation (TC = 25 °C) | 110 W |
| Package | TO-220AB |
| Datasheet | Available on this page (PDF) |
Note: data taken from the International Rectifier datasheet of IRF1018EPbF / ESPbF / ESLPbF, which covers IRF1018EPBF.
Technical document (PDF) | Request a quote for IRF1018EPBF (reply within 24 hours)

