GA100TS60SQInternational Rectifier - MOSFET Module

GA100TS60SQ Description

GA100TS60SQ is a silicon carbide (SiC) power module designed for high-power switching applications. It is manufactured by GeneSiC Semiconductor Inc. and consists of two SiC MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and two anti-parallel diodes in a single module. This power module has a maximum collector current of 100A and a maximum collector-emitter voltage of 600V. It features a low on-resistance, fast switching speed, and high thermal conductivity, making it suitable for use in high-frequency, high-temperature, and high-power applications such as electric vehicles, renewable energy systems, and industrial drives. The GA100TS60SQ is designed for high-reliability and efficiency, and it features advanced protection and monitoring features such as over-current protection, over-temperature protection, and under-voltage lockout. Its compact package design simplifies circuit design and assembly and provides high power density and thermal performance.

Target Applications

International Rectifier GA100TS60SQ finds applications in various industries and systems where high power switching is required.

Key Specifications

Manufacturer	International Rectifier
Category	MOSFET Module
Rated voltage	600 V
Rated current	100 A

Download GA100TS60SQ Datasheet

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