MCD162-16i01BIXYS - Thyristor / Diode Module

MCD162-16i01B Description

MCD162-16i01B is a dual IGBT (Insulated Gate Bipolar Transistor) module, which is a type of semiconductor device used for switching and amplifying electrical power in high power applications. The module consists of two IGBTs connected in a half-bridge configuration, with each IGBT having a collector-emitter voltage rating of 1600 volts and a maximum collector current rating of 162 amps. The module also includes a gate driver circuitry for controlling the IGBTs, as well as built-in protection features such as short-circuit and over-temperature protection. The MCD162-16I01 is designed for use in high power applications, such as motor drives, power supplies, and renewable energy systems. It is optimized for high efficiency, with low switching losses and a low on-state voltage drop. The module also features a high thermal conductivity and low thermal resistance, which allows for efficient heat dissipation and high power handling capabilities.

Target Applications

IXYS MCD162-16i01B is used for AC/DC power conversion and control: controlled and uncontrolled rectifiers, DC motor drives, soft starters, battery chargers, welding equipment, heater and temperature control, and AC power controllers.

Key Specifications

Manufacturer	IXYS
Category	Thyristor / Diode Modules
Rated voltage	1600 V
Rated current	300 A

Download MCD162-16i01B Datasheet

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