MBN800H45E2 Hitachi - IGBT Module
MBN800H45E2 Description
MBN800H45E2 is a 4,500 V / 800 A single igbt module in the MBN / MBM / MBL family from Hitachi Power Semiconductor Device / MinebeaMitsumi. Manufacturer catalog lists this model in mass production. Verify electrical ratings, package, terminals, isolation and exact ordering suffix against the manufacturer datasheet before ordering.
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Summary of Features
MBN800H45E2: 4,500 V / 800 A single igbt module from Hitachi Power Semiconductor Device / MinebeaMitsumi, MBN / MBM / MBL.
- VCES: 4,500 V
- Catalog current: 800 A
- Manufacturer status: Mass production
- Verify exact suffix and datasheet before purchase
Target Applications
Hitachi MBN800H45E2 finds applications in various industries and systems where high power switching is required.
Key Specifications
MBN800H45E2 is listed in the official Hitachi Power Semiconductor Device / MinebeaMitsumi power module catalog.
| Parameter | Value |
|---|---|
| Manufacturer | Hitachi Power Semiconductor Device / MinebeaMitsumi |
| Part number | MBN800H45E2 |
| Series | MBN / MBM / MBL |
| Device type | Single IGBT module |
| Rated VCES | 4,500 V |
| Catalog current rating | 800 A |
| Manufacturer catalog status | Mass production |
| Official source | Manufacturer product lineup |
Specifications are from the manufacturer lineup, not a verified complete product-specific datasheet. Confirm pinout, mechanical fit, gate-drive requirements and current ordering status.
Technical document (PDF) | Request a quote for MBN800H45E2 (reply within 24 hours)
Related Part Numbers
| MBN1200H45E2 4500V, 1200A | MBN750H65E2 6500V, 750A | MBN500H65E2 6500V, 500A | MBN800H45E2-H 4500V, 800A |
| MBN1200H45E2-H 4500V, 1200A | MBN800GS12BW 1200V, 800A | MBN800GS12AW 1200V, 800A | MBN800GR17 1700V, 800A |
| MBN800GR12 1200V, 800A | MBN800E33E 3300V, 800A | MBN800E33D 3300V, 800A | MBN900D45A 4500(V) / 900(A) |
| MBN600NS12BW 1200V, 600A | MBN600HS6PAW | MBN600HS6NAW 600V, 600A | MBN600GS12AW 1200V, 600A |

