MBM300GS12AWHitachi - Power Transistor Module

MBM300GS12AW Description

The Hitachi MBM300GS12AW is a power semiconductor module rated at 1200 V and 300 A. Silicon N-channel IGBT High speed and low saturation voltage. * low noise due to built-in free-wheeling. diode - ultra soft. Typical applications for this type of component include motor drives, power conversion and industrial control equipment.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MBM300GS12AW.

Target Applications

Hitachi MBM300GS12AW is used for nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment.

Key Specifications

Manufacturer	Hitachi
Category	Power Transistor Modules
Rated voltage	1200 V
Rated current	300 A

Download MBM300GS12AW Datasheet

MBM300GS12AW PDF Datasheet