6R1MBI75P-160Fuji Electric - Power Transistor Module
6R1MBI75P-160 Description
The Fuji Electric 6R1MBI75P-160 is a power semiconductor module rated at 1600 V and 75 A. This type of component is widely used in motor drives, power conversion and industrial control equipment.
USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the 6R1MBI75P-160.
Summary of Features
IGBT Module
Target Applications
Fuji Electric 6R1MBI75P-160 is used for Inverters for Motor Drive, AC & DC Servo Drive Amplifier and Uninterruptible Power Supply.
Key Specifications
| Manufacturer | Fuji Electric |
| Configuration | Diode module with brake: three-phase converter diode bridge + dynamic brake IGBT |
| Converter VRSM | 1760 V |
| Converter average output current IO | 75 A |
| Converter surge current IFSM | 600 A (one cycle) |
| Brake VCES / IC | 1400 V / 50 A (DC, TC = 25 °C) |
| Mounting torque | 2.0 - 2.5 N·m |

