6R1MBI75P-160 Fuji Electric - Power Transistor Module

Specifications: 1600(V) / 75(A)

6R1MBI75P-160 Diode Module from Fuji

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6R1MBI75P-160 Description

The Fuji Electric 6R1MBI75P-160 is a power semiconductor module, rated for 1600 V and 75 A. Components of this type are used in motor drives, power conversion and industrial control equipment.

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Summary of Features

IGBT Module

Target Applications

Fuji Electric 6R1MBI75P-160 is used for Inverters for Motor Drive, AC & DC Servo Drive Amplifier and Uninterruptible Power Supply.

Key Specifications

ManufacturerFuji Electric
ConfigurationDiode module with brake: three-phase converter diode bridge + dynamic brake IGBT
Converter VRSM1760 V
Converter average output current IO75 A
Converter surge current IFSM600 A (one cycle)
Brake VCES / IC1400 V / 50 A (DC, TC = 25 °C)
Mounting torque2.0 - 2.5 N·m

6R1MBI75P-160 Video

6R1MBI75P-160 video

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