6R1MBI75P-160Fuji Electric - Power Transistor Module

Specifications: 1600(V) / 75(A)

6R1MBI75P-160 Diode Module from Fuji

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6R1MBI75P-160 Description

The Fuji Electric 6R1MBI75P-160 is a power semiconductor module rated at 1600 V and 75 A. This type of component is widely used in motor drives, power conversion and industrial control equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the 6R1MBI75P-160.

Summary of Features

IGBT Module

Target Applications

Fuji Electric 6R1MBI75P-160 is used for Inverters for Motor Drive, AC & DC Servo Drive Amplifier and Uninterruptible Power Supply.

Key Specifications

ManufacturerFuji Electric
ConfigurationDiode module with brake: three-phase converter diode bridge + dynamic brake IGBT
Converter VRSM1760 V
Converter average output current IO75 A
Converter surge current IFSM600 A (one cycle)
Brake VCES / IC1400 V / 50 A (DC, TC = 25 °C)
Mounting torque2.0 - 2.5 N·m

6R1MBI75P-160 Video

6R1MBI75P-160 video

Download 6R1MBI75P-160 Datasheet

6R1MBI75P-160 PDF Datasheet