MBN1200D33AHitachi - Power Transistor Module

MBN1200D33A Description

The Hitachi MBN1200D33A is a power semiconductor module rated at 1200 V and 30 A, available from USComponent. Typical applications for this type of component include motor drives, power conversion and industrial control equipment.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MBN1200D33A.

Summary of Features

Target Applications

Hitachi MBN1200D33A is used for Inverters, Battery Chargers, DC Motors and General Purpose DC Power Supplies.

Key Specifications

MBN1200D33A is a 3,300 V, 1200 A IGBT module. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT module
Collector-emitter voltage (VCES)	3,300 V
Collector current (IC)	1200 A
Datasheet	Available on this page (PDF)

Download MBN1200D33A Datasheet

MBN1200D33A PDF Datasheet